CED1185/CEU1185
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
800V, 3.
4A, RDS(ON) = 2.
9 Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
800
±30
3.
4 13.
6 83
0.
7
Single Pulsed Avalanche Energy d
EAS 331
Single Pulsed Av...