CED840A/CEU840A
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
500V, 7.
5A, RDS(ON) = 0.
85Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 500
VGS ±30
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
ID
7.
5 4.
7
Drain Current-Pulsed a
IDM 30
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
107 0.
85
Single Pulsed Avalanche Ener...