CEP80N15/CEB80N15
CEF80N15
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP80N15 CEB80N15 CEF80N15
VDSS 150V 150V 150V
RDS(ON) 19mΩ 19mΩ 19mΩ
ID 76A
76A 76A d
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 & TO-220F full-pak for through hole.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drai...