CED02N7G-1/CEU02N7G-1
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
720V, 1.
6A, RDS(ON) = 6.
75Ω @VGS = 10V.
750V@Tc=150 C Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
Symbol VDS
VGS ID
IDM PD E...