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Part Number
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MTB2N60E |
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Manufacturer
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ON Semiconductor |
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Description
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High Energy Power FET |
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Published
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Feb 9, 2016 |
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Detailed Description
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MTB2N60E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mode S...
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Datasheet
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MTB2N60E
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Overview
MTB2N60E
Designer’s™ Data Sheet TMOS E−FET.
™ High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
http://onsemi.
com
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diod...
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