Part Number
|
MTB6N60E1 |
Manufacturer
|
ON Semiconductor |
Description
|
High Energy Power FET |
Published
|
Feb 9, 2016 |
Datasheet
|
MTB6N60E1
|
Features
MTB6N60E1
TMOS E−FET.™
High Energy Power FET D2PAK−SL Straight Lead
N−Channel Enhancement−Mode Silicon Gate
http://onsemi.com
This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy effi...
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