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Part Number
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MTD170P06KN3 |
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Manufacturer
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Cystech Electonics |
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Description
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P-Channel Enhancement Mode MOSFET |
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Published
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Feb 9, 2016 |
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Detailed Description
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CYStech Electronics Corp.
Spec. No. : C106N3 Issued Date : 2015.11.11
Revised Date : 2015.11.13 Page No. : 1/9
-60V P-...
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Datasheet
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MTD170P06KN3
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Overview
CYStech Electronics Corp.
Spec.
No.
: C106N3 Issued Date : 2015.
11.
11
Revised Date : 2015.
11.
13 Page No.
: 1/9
-60V P-Channel Enhancement Mode MOSFET
MTD170P06KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.
5V,ID=-1A
-60V -2.
2A
137mΩ(typ)
209mΩ(typ)
Features
• Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD protected gate • Pb-free lead plating package
Symbol
MTD170P06KN3
Outline
SOT-23 D
G：Gate S：Source D：Drain
GS
Ordering Information
Device MTD170P06KN3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & re...
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