NDF60N360U1, NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDF NDD Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Steady State TC = 25°C TC = 100°C VDSS VGS ID 600 ±25 13 (Note 1) 11 8.
1 (Note 1) 6.
9 V V A Power Steady TC = PD 30 114 W Dissipation – State 25°C RqJC Pulsed Drain Current tp = 10 ms IDM 51 44 A Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy TJ, TSTG IS EAS −55...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)