N-Channel Power FET
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, thi...
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