Part Number
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SFF10N60 |
Manufacturer
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WinSemi |
Description
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Silicon N-Channel MOSFET |
Published
|
Feb 12, 2016 |
Detailed Description
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Features
� 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V � Ultra-low Gate Charge(34nC) � Fast Switching Capability � 100%Avalanche...
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Datasheet
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SFF10N60
|
Overview
Features
� 10A,600V ,RDS(on)(Max0.
75Ω)@VGS=10V � Ultra-low Gate Charge(34nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability
SFF10N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies , power factor correction ,UPS and a electronic lamp ballast base on half bridge.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current (@...
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