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Part Number
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HWC27NC |
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Manufacturer
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Hexawave |
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Description
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C-Band Power FET Non-Via Hole Chip |
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Published
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Feb 14, 2016 |
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Detailed Description
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Features
• Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation
...
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Datasheet
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HWC27NC
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Overview
Features
• Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation
Description
The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications.
Absolute Maximum Ratings
VDS VGS ID IG TCH TSTG PT*
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation
* mounted on an infinite heat sink
+15V -5V IDSS 2mA 175°C -65 to +175°C 3.
5W
HWC27NC
C-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Outline Dimensions
650
Source
435 1
3
215 2
4
Source
0.
0
0.
0 58.
5
344.
5 400
Unit: µm Thickness: 100 ± 5 Chip size ± 50 Bond Pads 1-2 (Gate): Bo...
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