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Part Number
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HWL26NPB |
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Manufacturer
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Hexawave |
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Description
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L-Band GaAs Power FET |
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Published
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Feb 14, 2016 |
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Detailed Description
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Features
• Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless
Applications • High Efficiency • 3V to 6V ...
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Datasheet
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HWL26NPB
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Overview
Features
• Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless
Applications • High Efficiency • 3V to 6V Operation
Description The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications.
It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
1 23
Pin 1: Source Pin 2: Gate Pin 3: Drain
Absolute Maximum Ratings
VDS Drain to Source Voltage
+7V
VGS Gate to Source Voltage
-5V
ID Drain Current IG Gate Current
IDSS 1mA
TCH Channel Temperature
150°C
TSTG Storage Temperature
-65 to +150°C
PT Power Dissipation
0.
7 W
PB Package (SOT...
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