SIGC12T120LE IGBT3 Power Chip Features:  1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power module Applications:  drives C G E Chip Type SIGC12T120LE VCE 1200V ICn 8A Die Size 3.
54 x 3.
5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total / active Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 3.
54 x 3.
5 2.
028 x 2.
028 1.
107 x 0.
702 mm2 12.
39 / 6.
82 120 µm 200 mm 2243 pcs Photoi...

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