MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC028N03L3 DataSheet Rev.
2.
5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC028N03L3 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPD060N03LG •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride+imide PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)...

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