MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
BareDie
OptiMOS™3PowerMOS
TransistorChip IPC045N25N3
DataSheet
Rev.
2.
5 Final
Industrial&Multimarket
OptiMOS™3PowerMOS
TransistorChip
IPC045N25N3
1Description
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofBSZ16DN25NS3 G •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoJEDEC •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure)
PowerMOS
TransistorChip
Table1KeyPerformanceParameters
Parameter
Value
...