MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
BareDie
OptiMOS™3PowerMOS
TransistorChip IPC173N10N3
DataSheet
Rev.
2.
5 Final
Industrial&Multimarket
OptiMOS™3PowerMOS
TransistorChip
IPC173N10N3
1Description
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP045N10N3G •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure)
PowerMOS
TransistorChip
Table1KeyPerformanceParameters
Parameter
...