MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
BareDie
OptiMOS™3PowerMOS
TransistorChip IPC300N20N3
DataSheet
Rev.
2.
5 Final
Industrial&Multimarket
OptiMOS™3PowerMOS
TransistorChip
IPC300N20N3
1Description
•N-channelenhancementmode •Foradditionalcharacteristicsandmaxratingrefertothedatasheetof IPP110N20N3G •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSiCusystem •Passivation:nitride+imide(onlyonedgestructure) •Package:sawnonfoil
PowerMOS
TransistorChip
...