MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC300N15N3R DataSheet Rev.
2.
6 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC300N15N3R 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP075N15N3G1) •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parame...

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