MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
BareDie
OptiMOS™3PowerMOS
TransistorChip IPC302N08N3
DataSheet
Rev.
2.
5 Final
Industrial&Multimarket
OptiMOS™3PowerMOS
TransistorChip
IPC302N08N3
1Description
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB025N08N3G •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure)
PowerMOS
TransistorChip
Table1KeyPerformanceParameters
Parameter
...