MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC302NE7N3 DataSheet Rev.
2.
5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC302NE7N3 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP023NE7N3G •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) •Package:sawnonfoil PowerMOSTransistorChip Table1KeyPerformance...

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