DatasheetsPDF.com

IPD90N08S4-05

Part Number IPD90N08S4-05
Manufacturer Infineon
Description Power-Transistor
Published Feb 15, 2016
Detailed Description OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
Datasheet IPD90N08S4-05





Overview
OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD90N08S4-05 Product Summary V DS R DS(on),max ID 80 V 5.
3 mW 90 A PG-TO252-3-313 Type IPD90N08S4-05 Package PG-TO252-3-313 Marking 4N0805 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)