Part Number
|
FDB86360_F085 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
MOSFET |
Published
|
Feb 15, 2016 |
Detailed Description
|
FDB86360_F085 N-Channel Power Trench® MOSFET
FDB86360_F085
N-Channel Power Trench® MOSFET
80V, 110A, 1.8mΩ
January 201...
|
Datasheet
|
FDB86360_F085
|
Overview
FDB86360_F085 N-Channel Power Trench® MOSFET
FDB86360_F085
N-Channel Power Trench® MOSFET
80V, 110A, 1.
8mΩ
January 2014
DD
Features
Typ rDS(on) = 1.
5mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Systems
GS
TO-263 FDB SERIES
G
S
For current package drawing, please refer to the Fairchild website at www.
fairchildsemi.
com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Sour...
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