FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 36 A, 24 mΩ March 2015 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimize...

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