Part Number
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FDD86102LZ |
Manufacturer
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Fairchild Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Feb 15, 2016 |
Detailed Description
|
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86102LZ
N-Channel Shielded Gate PowerTrench® MOSF...
|
Datasheet
|
FDD86102LZ
|
Overview
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86102LZ
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 35 A, 22.
5 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 22.
5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.
5 V, ID = 7 A HBM ESD protection level 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench
technologies Fast switching speed 100% UIL tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and switching loss.
G...
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