|
Part Number
|
F59D4G161A |
|
Manufacturer
|
Elite Semiconductor |
|
Description
|
4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory |
|
Published
|
Feb 16, 2016 |
|
Detailed Description
|
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (512M + 8M) x 8bit - D...
|
|
Datasheet
|
F59D4G161A
|
Overview
ESMT
Flash
FEATURES
Voltage Supply: 1.
8V (1.
7V ~ 1.
95V) Organization
x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word Page Read Operation - Page Size: (2K + 64) Byte (x8)
Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.
) - Serial Access: 45ns (Min.
) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 350us (Typ.
) - Block Erase time: 3.
5ms (Typ.
)
F59D4G81A / F59D4G161A
4 Gbit (512M x 8 / ...
Similar Datasheet