IRGPS66160DPbF
VCES = 600V IC = 160A, TC =100°C
tSC 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 120A
Applications Welding H Bridge Converters
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode
C
G
E
n-channel
G Gate
IRGPS66160DPbF Super 247
C Collector
E Emitter
Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Perfor...