PD - 97003
INSULATED GATE BIPOLAR
TRANSISTOR
IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C • Lead-Free
C
G E
n-channel
VCES = 600V IC = 50A, TC=100°C
at TJ=175°C tsc 10µs, TJ=150°C VCE(on) typ.
= 1.
95V
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI • Excellent Current Sharing in Parallel Operation
TO-220AB
D2Pak
TO-262
IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C...