VCES = 600V IC = 7.
0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
75V @ IC = 4.
0A
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode
C
C
C C
G
E
n-channel
E G
IRGR4607DPbF D-Pak
E GC
IRGS4607DPbF D2Pak
E C G
IRGB4607DPbF TO-220AB
Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding
Features
Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
G Gate
C Collector
E Emitter
Benefits High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability Excellent Current...