IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 30A, TC =100°C
C CC C C
tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 18A
G
E
n-channel
E GC
E C G
GCE
GCE
IRGS4630DPbF IRGB4630DPbF IRGP4630DPbF IRGP4630D-EPbF
D2Pak
TO-220AC
TO-247AC
TO-247AD
Applications • Appliance Drives • Inverters • UPS
Features
G Gate
C Collector
Benefits
E Emitter
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching performance and high power capability
Positive VCE...