INSULATED GATE BIPOLAR
TRANSISTOR
PD - 95644A
IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G E
n-channel
VCES = 600V IC = 7.
0A, TC=100°C tsc 10µs, TJ=150°C VCE(on) typ.
= 1.
8V
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Curren...