Part Number
|
PXFC212551SC |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Feb 19, 2016 |
Detailed Description
|
PXFC212551SC
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2110 – 2170 MHz
Description
The PXFC212551SC is a...
|
Datasheet
|
PXFC212551SC
|
Overview
PXFC212551SC
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2110 – 2170 MHz
Description
The PXFC212551SC is a 240-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA
ƒ = 2165 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.
84 MHz 21
20 Gain
48 40
19 32
18 Efficiency 17
24 16...
Similar Datasheet