Part Number
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PTVA120251EA |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Feb 19, 2016 |
Detailed Description
|
PTVA120251EA
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz
Description
The PTVA120251EA LDMOS ...
|
Datasheet
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PTVA120251EA
|
Overview
PTVA120251EA
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz
Description
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.
Features include high gain and a thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA120251EA Package H-36265-2
Output Power (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C
300 µs pulse width, 12% duty cycle
60 Efficiency
55
70 60
50
45
40
35
30 18
Output Power
50
40
1200 MHz
1300 MHz 30
1400 MHz...
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