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1N6264

GaAs INFRARED EMITTING DIODE

Description

1N6264 GaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package 0.030 (0.76) NOM 0.255 (6.48) • High irradiance level • (*) Indicates JEDEC registered values 1.00 (25.4) MIN ANODE (CASE...

Fairchild Semiconductor

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