UNISONIC TECHNOLOGIES CO.
, LTD
UG25N120
Preliminary
Insulated Gate Bipolar
Transistor
1200V NPT TRENCH IGBT
DESCRIPTION
The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar
Transistor.
it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc.
The UTC UG25N120 is suitable for the resonant or soft switching applications.
FEATURES
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.
0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.
96mJ @ IC=25A and TC=25°C
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Fre...