Part Number
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PTFA210601F |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FET |
Published
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Feb 21, 2016 |
Detailed Description
|
PTFA210601E PTFA210601F
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz
Description
The PTFA210601E ...
|
Datasheet
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PTFA210601F
|
Overview
PTFA210601E PTFA210601F
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz
Description
The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA210601E Package H-36265-2
PTFA210601F Package H-37265-2
IM3 (dBc), ACPR (dBc) Drain Efficiency (%)
2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8...
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