Part Number
|
PTFA210701E |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Feb 21, 2016 |
Detailed Description
|
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz
PTFA210701...
|
Datasheet
|
PTFA210701E
|
Overview
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz
PTFA210701E PTFA210701F
Description
The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA210701E Package H-36265-2
PTFA210701F Package H-37265-2
IM3 (dBc), ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = ...
Similar Datasheet