Part Number
|
PTFA260451E |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Feb 21, 2016 |
Detailed Description
|
PTFA260451E
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz
Description
The PTFA260451E is a thermal...
|
Datasheet
|
PTFA260451E
|
Overview
PTFA260451E
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.
62 – 2.
68 GHz
Description
The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS ® FET intended for CDMA2000, Super3G (3GPP TSG RAN), and WiMAX applications from 2.
62 to 2.
68 GHz.
Thermallyenhanced packaging provide the coolest operation available.
Full gold metallization ensures excellent device lifetime and reliability.
PTFA260451E Package H-30265-2
Drain Efficiency (%) Adj.
Ch.
Power Ratio (dBc)
3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz
60 -40
50 Alt_1 2.
5 MHz
40 Adj 2.
135 MHz
30
-45 -50 -55
20 -60 10 Efficiency -65
0 -70 25 30 35 40 45 50
Output Power, Avg.
(dBm)
Fea...
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