Part Number
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PTFA261301E |
Manufacturer
|
Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Feb 21, 2016 |
Detailed Description
|
PTFA261301E PTFA261301F
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz
Description
The PTFA261301E...
|
Datasheet
|
PTFA261301E
|
Overview
PTFA261301E PTFA261301F
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.
62 – 2.
68 GHz
Description
The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications.
They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
PTFA261301E Package H-30260-2
Adj.
Channel Power Ratio (dBc) Drain Efficiency (%)
3-Carrier CDMA2000 Performance at 28 Volts
IDQ = 1.
4 A, ƒ = 2680 MHz
-10 30 Efficiency
-20 25
-30 20
-40 Alt2 15 Alt
-50 10
-60 ACPR 5
-70 0
0 5 10 15 20 25 30 35
Output Power, avg.
...
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