Part Number
|
PTFA261702E |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Feb 21, 2016 |
Detailed Description
|
PTFA261702E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 ...
|
Datasheet
|
PTFA261702E
|
Overview
PTFA261702E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz
Description
The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.
Features include input and output matching, and thermally-enhanced package with slotted flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Efficiency (%) EVM (dBc)
WiMAX Performance
VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.
5
MHz, sample rate = 4 MHz) 30 -15
Efficiency 25 EVM: ƒ = 2.
62 GHz 20 EVM: ƒ = 2.
68 GHz
EVM: ƒ = 2.
...
Similar Datasheet