Part Number
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PTFB090901EA |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Feb 21, 2016 |
Detailed Description
|
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz
Descr...
|
Datasheet
|
PTFB090901EA
|
Overview
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced packages.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB090901EA Package H-36265-2
PTFB090901FA Package H-37265-2
PTFB090901EA PTFB090901FA
Gain (dB) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz,
3GPP W...
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