PMFPB8040XP
20 V, 3.
7 A / 440 mV VF P-channel MOSFET-
Schottky
combination
21 December 2012
Product data sheet
1.
General description
Small-signal P-channel enhancement mode Field-Effect
Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits
• 1.
8 V RDSon rated for low-voltage gate drive • Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.
65 mm • Exposed drain pad for excellent thermal conduction • Integrated ultra low VF MEGA
Schottky diode
3.
Applications
• Charging swit...