MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
OptiMOSTM
OptiMOSTM5Power-MOSFET,30V BSC0503NSI
DataSheet
Rev.
2.
0 Final
PowerManagement&Multimarket
1Description
Features
•Optimizedforhighperformancebuckconverters •Monolithicintegrated
Schottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.
5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
3.
0
mΩ
ID 88 A
QOSS
10.
6
nC
QG(0V.
.
4.
5V)
7.
1
nC
OptiMOSTM5Power-MOSFET,30V BSC0503NSI
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