| Part Number | GTVA221701FA |
| Manufacturer | Infineon |
| Title | Thermally-Enhanced High Power RF GaN HEMT |
| Description | The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications... |
| Features |
input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
• Input matched • Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB • Capabl... |
| Published | Feb 23, 2016 |
| Datasheet |
|