SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC
Schottky Diode
IDW24G65C5B
Final Datasheet
Rev.
2.
0, 2015-04-13
Power Management & Multimarket
5th Generation thinQ!™ SiC
Schottky Diode
1 Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes.
A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent a...