LFPAK56
PSMN1R4-40YLD
N-channel 40 V 1.
4 mΩ logic level MOSFET in LFPAK56 using
NextPower-S3 technology
26 August 2014
Product data sheet
1.
General description
Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.
This product has been designed and qualified for high performance power switching applications.
2.
Features and benefits
• NextPower-S3 technology delivers ‘superfast switching with soft recovery’ • Low QRR, QG and QGD for high system efficiency and low EMI designs •
Schottky-Plus body-diode, gives soft switching without the associated high IDSS
leakage
• Optimised for 4.
5 V gate drive utilising...