APT80GA90B APT80GA90S 900V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT.
Low Eoff is achieved through leading technology silicon design and lifetime control processes.
A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies.
Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive.
The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
TO-247 APT80GA90B Single die IGBT APT80GA90S D3PAK FEATURES • Fast switching ...

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