Part Number
|
KMB010P30QA |
Manufacturer
|
KEC |
Description
|
P-Channel Trench MOSFET |
Published
|
Mar 5, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching t...
|
Datasheet
|
KMB010P30QA
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.
It is mainly suitable for Battery pack.
FEATURES VDSS=-30V, ID=-10A.
Drain-Source ON Resistance.
RDS(ON)=20m (Max.
) @ VGS=-10V RDS(ON)=28m (Max.
) @ VGS=-4.
5V Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain Source Voltage Gate Source Voltage
Drain Current
VDSS
-30
V
VGSS
20 V
DC ID* -10 A
Pulsed
IDP
-80
A
Drain Source Diode Forward Current
IS -1.
7 A
Drain Power Dissipation
PD* 2.
0 W
Maximum Junction T...
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