PD-95837B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 2N7599T3 IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHY67C30CM 100K Rads (Si) IRHY63C30CM 300K Rads (Si) RDS(on) 3.
0Ω 3.
0Ω ID 3.
4A 3.
4A International Rectifier’s R6TM technology provides superior power MOSFETs for space applications.
These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters a...

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