IRG8B08N120KDPbF IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
VCES = 1200V IC = 8A, TC =100°C
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ.
= 1.
7V @ IC = 5A
Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding
Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
G
E
n-channel
GCE
TO-220AB IRG8B08N120KDPbF
GCE
TO-247AC IRG8P08N120KDPbF
GC E
TO-247AD IRG8P08N120KD-EPbF
G Gate
C Collector
E Emitter
Benefits High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme ...