VCES = 1200V IC = 50A, TC =100°C
IRG8P50N120KDPbF IRG8P50N120KD-EPbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ.
= 1.
7V @ IC = 35A
Applications
• Industrial Motor Drive • UPS • Solar Inverters • Welding
G
E
n-channel
GC E
GC E
IRG8P50N120KDPbF IRG8P50N120KD‐EPbF
TO‐247AC
TO‐247AD
G Gate
C Collector
E Emitter
Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
Benefits High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Paralle...